| PART |
Description |
Maker |
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| MAPL-000822-002PP |
LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| MAPLST2122-030CF |
LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| NE5550779A NE5550779A-T1 NE5550779A-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| NE5550279A-T1A-A NE5550279A-A NE5550279A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
| PTFB091507FH |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz
|
Infineon Technologies AG
|
